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| NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES * LOW COST PLASTIC SURFACE MOUNT PACKAGE * HIGH OUTPUT POWER: +35.5 dBm TYP * HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz * HIGH POWER ADDED EFFICIENCY: 65% TYP @ VDS = 3.2 V, f = 915 MHz 5.7 MAX. 0.60.15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.2 MAX. 1.50.2 Source Source 9Z001 3 Gate Drain 4.4 MAX. 0.80.15 Gate 1.0 MAX. Drain 1.2 MAX. * SINGLE SUPPLY: 2.8 to 6.0 V * CLASS AB OPERATION * SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX A 0.40.15 0.8 MAX. 3.60.2 0.20.1 DESCRIPTION NEC's NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or 34.6 dBm output power at 2.8 V by varying the gate voltage as a power control function. 0.90.2 5.7 MAX. APPLICATIONS * DIGITAL CELLULAR PHONES: 3.2 V GSM900/DCS 1800 Dual Band Handsets * OTHERS: Two-Way Pagers Retail Business Radio Special Mobile Radio Short Range Wireless ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS POUT GL CHARACTERISTICS Output Power Linear Gain (at PIN = +10 dBm) Drain Efficiency Power Added Efficiency Operating Drain Current Output Power Linear Gain (at PIN = +10 dBm) Operating Drain Current Drain Efficiency Power Added Efficiency Gate-to-Source Leakage Current Drain-to-Source Leakage Current Gate Threshold Voltage Transconductance Drain-to-Source Breakdown Voltage Thermal Resistance UNITS dBm dB % % A dBm dB mA % % nA nA V S V C/W 15 1.0 29 31.0 MIN NE5520379A 79A TYP 35.5 16.0 68 65 1.0 33.0 8.5 750 38 35 100 100 1.35 2.5 20 5 2.0 VGS = 6.0 V VDS = 8.5 V VDS = 3.5 V, IDS = 1 mA VDS = 3.5 V, IDS1 = 0.8 A, IDS2 = 1.0 A IDSS = 10 A Channel-to-Case f = 1785 MHz, VDS = 3.2 V, VGS = 2.5 V (NOTE 1) MAX TEST CONDITIONS f = 915 MHz, VDS = 3.2 V, VGS = 2.5 V(RF OFF) (NOTE 1) D Functional Characteristics ADD ID POUT GL ID D ADD Electrical DC Characteristics IGSS IDSS VTH gm BVDSS RTH Note: 1. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1 reject for several samples. California Eastern Laboratories NE5520379A ABSOLUTE MAXIMUM RATINGS1 (TA = 25 C) SYMBOLS VDS VGS ID ID PT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current (Pulse Test) Total Power Dissipation Channel Temperature Storage Temperature 2 RECOMMENDED OPERATING LIMITS SYMBOLS VDS VGS IDS PIN PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current (Pulse Test) Input Power UNITS V V A dBm TYP 3.2 2.5 1.75 25 MAX 6.0 3.5 2.0 26 UNITS V V A A W C C RATINGS 15.0 5.0 1.5 3.0 20 125 -65 to +125 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle 50%, Ton 1 s. ORDERING INFORMATION PART NUMBER NE5520379A-T1A-A QTY TYPICAL PERFORMANCE CURVES DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4.0 3.6 V 3.4 V 3.2 V (TA = 25C) QUIESCENT DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 10 000 VDS = 3.2 V 3.5 3.0 2.5 2.0 2.6 V 3.0 V Quiescent Drain Current, ID (A) Drain Current, ID (A) 1 000 2.8 V 100 1.5 2.4 V 1.0 2.2 V 10 0.5 2.0 V 0 1 2 3 4 5 6 7 8 9 10 1 1.0 1.5 2.0 2.5 3.0 Drain to Source Voltage, VDS (V) Gate to Source Voltage, VGS (V) NE5520379A TYPICAL PERFORMANCE CURVES OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER (460 MHz) 40 (TA = 25C) DRAIN EFFICIENCY, POWER ADDED EFFICIENCY vs. INPUT POWER 2500 100 Output Power, Pout (dBm) Drain Current, ID (mA) 35 Pout 2000 Drain Efficiency ,d (%) Powwer Added Efficiency, add (%) VDS = 3.6 V IDset = 150 mA f = 460 MHz VDS = 3.6 V IDset = 150 mA f = 460 MHz d add 50 30 ID 25 1500 1000 20 500 15 0 5 10 15 20 0 25 0 0 5 10 15 20 25 Input Power, Pin (dBm) Input Power, Pin (dBm) OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER 40 DRAIN EFFICIENCY, POWER ADDED EFFICIENCY vs. INPUT POWER 2 500 100 Drain Efficiency ,d (%) Powwer Added Efficiency, add (%) Output Power, Pout (dBm) 30 ID 25 1 500 Drain Current, ID (mA) 35 VDS = 3.2 V IDSQ = 600 mA f = 915 MHz VDS = 3.2 V IDSQ = 600 mA f = 915 MHz Pout 2 000 d 50 add 1 000 20 500 15 5 10 15 20 25 30 0 35 0 5 10 15 20 25 30 35 Input Power, Pin (dBm) Input Power, Pin (dBm) OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER 35 Pout Drain Efficiency ,d (%) Powwer Added Efficiency, add (%) Output Power, Pout (dBm) 25 1 500 Drain Current, ID (mA) 30 VDS = 3.2 V IDSQ = 600 mA f = 1 785 MHz 2 500 100 DRAIN EFFICIENCY, POWER ADDED EFFICIENCY vs. INPUT POWER VDS = 3.2 V IDSQ = 600 mA f = 1 785 MHz 2 000 50 d 20 ID 15 1 000 500 add 10 5 10 15 20 25 30 0 35 0 5 10 15 20 25 30 35 Input Power, Pin (dBm) Input Power, Pin (dBm) NE5520379A TYPICAL PERFORMANCE CURVES OUTPUT POWER, DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 36 (TA = 25C) OUTPUT POWER, DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 2 500 VDS = 3.2 V f = 915 MHz Pin = 25 dBm 33 Pout 2 000 VDS = 3.2 V f = 1 785 MHz Pin = 25 dBm Pout 2 500 Output Power, Pout (dBm) Drain Current, ID (mA) 34 ID 1 500 29 1 500 33 1 000 27 1 000 32 500 25 ID 500 31 0.0 Gate to Source Voltage, VGS (V) 1.0 2.0 3.0 0 4.0 23 0.0 Gate to Source Voltage, VGS (V) 1.0 2.0 3.0 0 4.0 Drain Current, ID (mA) 35 Output Power, Pout (dBm) 31 2 000 NE5520379A TYPICAL SCATTERING PARAMETERS (TA = 25C) Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j25 j100 120 150 90 60 30 j10 0 10 25 50 100 0 180 0 -j10 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz VD = 2.4 V, ID = 300 mA -150 -120 -30 -60 -90 NE5520379A VD = 2.4 V, ID = 300 mA FREQUENCY GHz 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 4.00 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.91 0.91 0.91 0.91 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.93 0.93 0.93 0.93 0.93 0.93 0.94 0.94 0.94 0.95 0.95 0.95 0.95 0.95 0.96 0.96 0.96 0.96 0.96 0.96 0.96 0.97 0.97 0.97 0.97 0.97 0.97 0.97 0.98 0.98 0.98 0.98 0.99 ANG -166.00 -171.34 -174.19 -176.05 -177.47 -178.62 -179.56 179.62 178.83 178.12 177.42 176.76 176.09 175.48 174.86 174.22 173.60 173.03 172.43 170.05 168.90 167.71 166.62 165.46 164.33 163.28 162.22 161.21 160.17 159.17 158.29 157.41 156.53 155.72 154.92 154.17 153.44 152.77 152.20 151.52 150.94 150.36 149.78 148.45 MAG 4.96 3.32 2.48 1.98 1.63 1.39 1.20 1.06 0.94 0.85 0.77 0.70 0.64 0.59 0.54 0.50 0.47 0.44 0.41 0.32 0.28 0.25 0.23 0.21 0.19 0.17 0.16 0.14 0.13 0.12 0.11 0.11 0.10 0.09 0.09 0.08 0.08 0.07 0.07 0.06 0.06 0.06 0.05 0.04 S21 ANG 91.46 86.63 82.34 78.94 75.61 72.51 69.74 66.85 64.15 61.50 58.92 56.40 53.87 51.57 49.32 46.99 44.90 42.72 40.69 33.12 29.64 26.30 23.15 20.23 17.61 15.02 12.55 10.37 8.42 6.46 4.59 3.14 1.92 0.69 -0.82 -2.13 -3.31 -4.03 -4.64 -5.69 -5.93 -6.52 -6.88 -5.44 MAG 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.01 0.01 0.01 S12 ANG 2.83 -3.69 -4.78 -7.98 -9.01 -11.04 -14.40 -16.23 -18.73 -20.26 -19.69 -22.40 -24.70 -26.30 -27.01 -28.40 -29.48 -31.03 -31.65 -35.32 -38.66 -40.07 -40.31 -42.08 -41.45 -41.35 -40.16 -35.50 -30.05 -21.25 -15.26 -1.99 9.51 17.40 49.62 54.56 75.69 84.78 91.22 89.31 94.43 93.75 93.93 93.64 MAG 0.87 0.87 0.87 0.87 0.87 0.87 0.88 0.88 0.88 0.88 0.88 0.89 0.89 0.89 0.89 0.89 0.90 0.90 0.90 0.91 0.91 0.91 0.92 0.92 0.92 0.92 0.93 0.93 0.93 0.93 0.94 0.94 0.95 0.95 0.95 0.95 0.96 0.96 0.97 0.97 0.98 0.98 0.98 0.99 S22 ANG -177.51 -178.85 -179.72 179.68 179.13 178.64 178.26 177.80 177.43 176.97 176.61 176.14 175.63 175.27 174.81 174.31 173.93 173.42 172.99 171.08 170.17 169.12 168.10 167.21 166.35 165.39 164.37 163.55 162.80 161.93 160.98 160.15 159.57 158.86 158.02 157.17 156.56 155.94 155.48 154.37 153.79 153.16 152.45 150.04 K 0.12 0.16 0.24 0.29 0.37 0.44 0.50 0.56 0.63 0.71 0.87 0.86 0.93 1.05 1.12 1.27 1.33 1.44 1.61 2.08 2.43 2.88 3.31 4.05 4.91 5.68 7.09 8.29 11.07 14.89 16.85 18.02 16.22 18.87 17.17 17.91 11.30 12.00 7.64 6.03 4.52 3.50 3.08 1.13 MAG1 (dB) 24.77 22.87 21.67 20.65 19.83 19.13 18.71 18.21 17.79 17.43 17.25 16.77 16.44 14.89 13.95 12.74 12.17 11.53 10.79 8.96 8.10 7.18 6.55 5.86 5.12 4.38 3.84 3.46 2.90 2.19 1.67 1.65 1.49 0.98 0.60 0.80 0.89 0.68 0.86 0.83 1.47 1.69 1.43 4.11 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE5520379A TYPICAL SCATTERING PARAMETERS (TA = 25C) Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j25 j100 120 150 90 60 30 j10 0 10 25 50 100 0 180 0 -j10 -j25 -j100 -j50 Coordinates in Ohms Frequency in GHz VD = 3.0 V, ID = 600 mA -150 -120 -30 -60 NE5520379A VD = 3.0 V, ID = 600 mA FREQUENCY GHz 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 4.00 Note: 1. Gain Calculation: MAG = |S21| |S12| -90 S11 MAG 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.94 0.94 0.94 0.94 0.94 0.94 0.94 0.94 0.94 0.94 0.94 0.95 0.95 0.95 0.95 0.95 0.95 0.95 0.96 0.96 0.96 0.96 0.96 0.96 0.96 0.96 0.97 0.97 0.97 0.97 0.97 0.97 0.98 0.98 0.98 0.99 ANG -166.51 -171.79 -174.68 -176.58 -178.04 -179.24 179.79 178.92 178.11 177.36 176.64 175.96 175.28 174.66 174.05 173.41 172.80 172.21 171.63 170.41 169.32 168.20 167.05 166.00 164.89 163.80 162.78 161.76 160.78 159.78 158.80 157.95 157.10 156.24 155.45 154.66 153.93 153.22 152.55 152.00 151.33 150.77 150.20 149.63 148.33 MAG 5.08 3.41 2.54 2.03 1.69 1.44 1.25 1.11 0.99 0.89 0.81 0.75 0.69 0.63 0.59 0.55 0.51 0.48 0.45 0.40 0.36 0.32 0.29 0.27 0.24 0.22 0.20 0.19 0.18 0.16 0.15 0.14 0.13 0.12 0.12 0.11 0.10 0.10 0.09 0.09 0.08 0.08 0.07 0.07 0.05 S21 ANG 92.43 88.12 84.33 81.48 78.54 75.97 73.62 71.09 68.88 66.51 64.31 62.14 59.81 57.87 55.81 53.68 51.88 49.77 47.95 44.15 40.82 37.55 34.19 30.96 28.24 25.67 22.92 20.12 17.88 16.09 14.12 12.01 10.33 9.11 7.63 5.72 3.94 2.73 1.96 1.15 -0.21 -0.76 -1.47 -2.27 -2.98 MAG 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.01 0.01 0.01 0.01 S12 ANG 4.88 -2.92 -2.57 -2.60 -5.09 -7.10 -9.56 -11.04 -12.64 -12.76 -13.34 -14.37 -16.01 -17.13 -16.95 -18.56 -19.71 -19.61 -19.95 -24.20 -23.13 -24.29 -25.78 -25.39 -25.03 -22.37 -20.35 -18.82 -12.65 -5.72 2.28 9.59 16.52 24.13 38.01 48.37 55.62 64.87 69.74 81.95 80.85 86.32 86.22 87.98 88.38 MAG 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.90 0.89 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.91 0.91 0.91 0.91 0.92 0.92 0.92 0.92 0.92 0.93 0.93 0.93 0.93 0.94 0.95 0.94 0.94 0.95 0.96 0.96 0.96 0.97 0.97 0.98 0.97 0.98 S22 ANG -178.46 -179.65 179.54 178.98 178.33 177.89 177.44 176.93 176.63 176.06 175.72 175.29 174.68 174.42 173.89 173.39 173.13 172.51 172.16 171.11 170.30 169.48 168.40 167.30 166.57 165.86 164.91 163.74 162.96 162.54 161.73 160.62 159.68 159.46 158.99 158.00 156.90 156.45 156.03 155.48 154.23 153.57 153.08 152.19 149.87 K 0.14 0.15 0.25 0.33 0.39 0.47 0.52 0.59 0.68 0.75 0.93 0.91 1.02 1.14 1.18 1.39 1.40 1.52 1.71 1.93 2.13 2.56 3.14 3.52 4.07 4.72 6.13 7.13 7.85 9.04 11.69 12.90 11.53 10.27 11.45 10.95 10.04 7.62 7.17 6.39 5.03 3.62 3.20 3.09 1.37 MAG1 (dB) 26.14 24.16 23.01 21.95 21.14 20.48 20.03 19.51 19.16 18.72 18.57 18.08 17.03 15.30 14.78 13.45 13.11 12.48 11.68 10.81 10.08 9.13 8.10 7.56 7.05 6.28 5.28 4.85 4.65 4.16 3.15 2.58 2.95 2.98 2.19 1.62 2.00 2.62 2.29 2.11 2.21 3.03 3.00 2.26 3.81 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE5520379A APPLICATION CIRCUIT (900 MHz) VG C3 C9 C11 P1 J3 VD J4 C2 C8 C10 P.C.B. LAYOUT (Units in mm) 79A PACKAGE 4.0 1.7 GND C13 C12 RFIN J1 A3 C5 C6 R1 C7 C1 C4 C14 RFOUT J2 Drain Gate 5.9 1.2 U1 100637 NE55XXX79A-EV Source SOURCE 0.5 LEAD ON DRAIN IS LARGER Through hole 0.2 x 33 0.5 6.1 0.5 A3 DRAIN GATE Note: Use rosin or other material to prevent solder from penetrating through-holes. VGG(+2.0 V) VDD (+3.1 V) + 4.7uF 0.1uF 1000pF 100pF 100pF + 1000pF 0.1uF 4.7uF 10pF 5K NE5520379A 10pF 18pF 4.7pF RF Input 8.2pF RF Output 18pF NE5520379A PARTS LIST 1 4 2 1 2 1 2 1 2 2 2 1 1 1 2 1 TF-100637 MA101J MCR03J512 MCH185A180JK MCH185A4R7CK MCH185A100DK MCH185A8R2DK TAJB475K010R GRM40X7R104K025BL GRM40C0G102J050BD NE5520379A 703401 1250-003 2052-5636-02 FD-100637 C2, C3 R1 C4, C7 C14 C1, C5 C6 C12, C13 C10, C11 C8, C9 U1 P1 J3, J4 J1, J2 PCB TEST CIRCUIT BLK 2-56 X 3/16 PHILLIPS PAN HEAD CASE 1100 pF CAP MURATA 0603 5.1K OHMS RESISTOR ROHM 0603 18 pF CAP ROHM 0603 4.7 pF CAP ROHM 0603 10 pF CAP ROHM 0603 8.2 pF CAP ROHM CASE B 4.7 uF CAP ATC 0805 .1 uF CAP MURATA 0805 1000 pF CAP MURATA6 IC NEC, LD-MOS FET GROUND LUG CONCORD FEEDTHRU MURATA FLANGE MOUNT JACK RECEPTACLE NE5520379A-EVAL FAB. DRAWING 16 15 14 13 12 11 10 9 8 7 5 4 3 2 1 1.0 NE5520379A RECOMMENDED SOLDERING CONDITIONS This prod those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Time at peak temperature Time at temperature of 220C or higher Preheating time at 120 to 180C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) VPS Peak temperature (package surface temperature) Time at temperature of 200C or higher Preheating time at 120 to 150C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Partial Heating Peak temperature (pin temperature) Soldering time (per pin of device) Maximum chlorine content of rosin flux (% mass) Soldering Conditions Peak temperature (package surface temperature) : 260C or below : 10 seconds or less : 60 seconds or less : 12030 seconds : 3 times : 0.2%(Wt.) or below : 215C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below : 260C or below : 10 seconds or less : 1 time : 0.2%(Wt.) or below : 350C or below : 3 seconds or less : 0.2%(Wt.) or below HS350-P3 WS260 VP215 Condition Symbol IR260 Preheating temperature (package surface temperature) : 120C or below Caution Do not use different soldering methods together (except for partial heating). Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 03/08/2005 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability. |
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